| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| K4B1G1646I-BMK0 | 其他被动元件 |
SAMSUNG/三星 |
BGA96 |
2018+ |
300 |
|||
| K4A4G085WD-BCRC | 其他被动元件 |
SAMSUNG/三星 |
BGA78 |
2018+ |
1200 |
|||
| K4A4G165WE-BCWE | 存储IC |
SAMSUNG/三星 |
BGA96 |
2018+ |
5000 |
|||
| K4T51163QN-BIE7 | 存储IC |
SAMSUNG/三星 |
18+ |
50011 |
||||
| KLMDG8JEUD-B04P | 存储IC |
SAMSUNG/三星 |
11.5x13x1.2mm |
19+ |
30016 |
|||
| KLM8G1GEUF-B04P | 存储IC |
SAMSUNG/三星 |
11.5x13x0.8mm |
19+ |
30024 |
|||
| KMQ310006B-B419 | 内存芯片 |
SAMSUNG/三星 |
BGA221 |
5001 |
||||
| TYE01H231676RA | 内存芯片 |
TOSHIBA/东芝 |
BGA221 |
2018+ |
850 |
|||
| KMGD6001BM-B421 | 存储IC |
SAMSUNG/三星 |
10 |
|||||
| K4A4G045WE-BCTD | SAMSUNG/三星 |
17+ |
50 |
|||||
| PQ24715RGRR | TI/德州仪器 |
19+ |
30000 |
|||||
| MT40A512M16JY-083E:B | DDR存储器 |
MICRON/美光 |
BGA |
2018+ |
5000 |
|||
| MT41K256M16LY-107:N | 存储IC |
MICRON/美光 |
BGA |
2018+ |
5000 |
|||
| MT41K256M8DA-125:K | SDRAM存储器 |
MICRON/美光 |
BGA |
2018+ |
5000 |
|||
| MT29F64G08CBABAWP:B | FLASH存储器 |
MICRON/美光 |
BGA |
2018+ |
5000 |
|||
| MT29F2G08ABAEAWP:E | FLASH存储器 |
MICRON/美光 |
BGA |
2018+ |
5000 |
|||
| MT29F1G08ABAEAWP:E | FLASH存储器 |
MICRON/美光 |
BGA |
2018+ |
5000 |
|||
| STI5202QUD | ST/意法 |
TSOP48 |
18+ |
30 |
||||
| H5TQ4G63EFR-TEC | 存储IC |
SKHYNIX/海力士 |
BGA |
2018+ |
5000 |
|||
| H5PS1G63KFR-S5C | 存储IC |
SKHYNIX/海力士 |
BGA |
2018+ |
5000 |
商家默认展示20条库存